飞秒激光直写掩模制作硅表面微柱阵列

作者：张馨予

提出了一种使用飞秒激光直写掩模加工微柱阵列的方法。利用高重复频率飞秒激光的热氧化效应在硅表面制作出二氧化硅点阵列,然后经氢氧化钾刻蚀得到微柱阵列。相比于传统的制作微柱阵列的方法,使用飞秒激光直写掩模制作微柱阵列的方法工艺简单,成本更低。此外,探究了激光功率、曝光时间和氢氟酸蚀刻对掩模尺寸的影响。这种微柱阵列在减反、传感等领域具有很好的应用价值。

关键词

Abstract

A method of fabricating micro-pillar array based on femtosecond laser direct writing mask is presented. Using the thermal oxidation effect of a high-repetition-rate femtosecond laser, the silicon dioxide dot array is formed on the silicon surface. The micro-pillar array is obtained by etching with potassium hydroxide. Compared with the traditional lithography, the proposed method is simple and low-cost. In addition, the influences of laser power, exposure time, and hydrofluoric acide etching on the mask size are investigated. This kind of micro-pillar array has good application value in reflection reducing and sensing.

飞秒激光直写掩模制作硅表面微柱阵列

补充资料

飞秒激光直写掩模制作硅表面微柱阵列

中图分类号：O439

DOI：10.3788/LOP56.183201

所属栏目：超快光学

基金项目：国家重点研发计划;

收稿日期：2019-02-25

修改稿日期：2019-04-01

网络出版日期：2019-09-01

作者单位 点击查看

田亚湘：中南大学机电工程学院高性能复杂制造国家重点实验室, 湖南长沙 410083
张帆：中南大学机电工程学院高性能复杂制造国家重点实验室, 湖南长沙 410083
丁铠文：中南大学机电工程学院高性能复杂制造国家重点实验室, 湖南长沙 410083
满姝：中南大学机电工程学院高性能复杂制造国家重点实验室, 湖南长沙 410083
吴碧微：中南大学机电工程学院高性能复杂制造国家重点实验室, 湖南长沙 410083

联系人作者：田亚湘(769142271@qq.com)

备注：国家重点研发计划;

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